Lattice Location Studies of the Amphoteric Nature of Implanted Mg in GaN

Despite the renewed interest in ion implantation doping of GaN, efficient electrical activation remains a challenge. The lattice location of $^{27}$Mg is investigated in GaN of different doping types as a function of implantation temperature and fluence at CERN's ISOLDE facility. The amphoteric...

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Detalles Bibliográficos
Autores principales: Wahl, Ulrich, Correia, João Guilherme, Costa, Ângelo R. G., David‐Bosne, Eric, Kappers, Menno J., da Silva, Manuel Ribeiro, Lippertz, Gertjan, Lima, Tiago A. L., Villarreal, Renan, Vantomme, André, Pereira, Lino M. C.
Publicado: 2021
Acceso en línea:https://dx.doi.org/10.1002/aelm.202100345
http://cds.cern.ch/record/2774736

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