Cargando…
Electron-Induced Upsets and Stuck Bits in SDRAMs in the Jovian Environment
This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies be...
| Autores principales: | , , , , , , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2021
|
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2021.3068186 http://cds.cern.ch/record/2777061 |