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Analysis of Bipolar Integrated Circuit Degradation Mechanisms Against Combined TID–DD Effects

Integrated circuits sensitive to both total ionizing dose (TID) and displacement damage (DD) effects can exhibit degradation profiles resulting from a combination of degradation mechanisms induced by both effects. This work presents circuit simulations based on experimental data to explain degradati...

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Detalles Bibliográficos
Autores principales:	Ferraro, Rudy, Alia, Ruben Garcia, Danzeca, Salvatore, Masi, Alessandro
Lenguaje:	eng
Publicado:	2021
Materias:	Accelerators and Storage Rings
Acceso en línea:	https://dx.doi.org/10.1109/tns.2021.3082646 http://cds.cern.ch/record/2778912

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