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Performances of highly irradiated 3D and planar pixel sensors interconnected to the RD53A readout chip
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new highly radiation tolerant silicon pixel sensors, capable of withstanding fluences up to $2.3 \times 10^{16} \, \mathrm{n_{eq}/cm^2}$ (1 MeV equivalent neutrons). In this paper results obtained in beam test experime...
Autores principales: | , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2019
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/15/02/C02016 http://cds.cern.ch/record/2780272 |
Sumario: | The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new highly radiation tolerant silicon pixel sensors, capable of withstanding fluences up to $2.3 \times 10^{16} \, \mathrm{n_{eq}/cm^2}$ (1 MeV equivalent neutrons).
In this paper results obtained in beam test experiments with 3D and planar pixel sensors interconnected with the RD53A readout chip are reported. RD53A is the first prototype in 65 nm technology issued by the RD53 collaboration for the future readout chip to be used in the upgraded pixel detectors.
The interconnected modules have been tested in a proton beam at CERN or an electron beam at DESY, before and after irradiation, which was performed at the CERN IRRAD facility or at the KIT Irradiation Center, up to an equivalent fluence of $1 \times 10^{16} \, \mathrm{n_{eq}/cm^2}$.
The sensors were made by FBK foundry in Trento, Italy, and their development was done in collaboration with INFN (Istituto Nazionale di Fisica Nucleare, Italy).
The analysis of the collected data shows hit detection efficiencies around 99\% measured after irradiation. All results are obtained in the framework of the CMS R\&D activities. |
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