Radiation hard monolithic CMOS sensors with small electrodes for the HL-LHC and beyond

The upgrade of tracking detectors for experiments at the HL-LHC and future colliders requires the development of novel radiation hard silicon sensors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation hard monolithic CMOS sensors. We designed, manufactured and tested DMAPS in the TowerJazz 180 nm CMOS imaging technology with small electrodes pixel designs, that have a pixel pitch well below the current hybrid pixel detectors, and less multiple scattering due to a reduced total silicon thickness. In this document we present the recent results from these sensors manufactured on Czochralski silicon substrates in terms of cluster size, impact on tracking and time resolution from measurements carried out at beam tests on irradiated samples at 1e15 1 MeV $\mathrm{n}_\mathrm{eq}/\mathrm{cm}^{2}$.