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Influence of Surface Damage and Bulk Defects on the Interstrip Isolation of p-type Silicon Strip Sensors

Silicon strip sensors of upcoming tracking detectors in high luminosity colliders usually consist of a p-doped bulk with n-type strip implants. The general consensus is that such a design requires an additional interstrip isolation structure such as a p-stop implant. If there is no additional implan...

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Detalles Bibliográficos
Autores principales:	Gosewisch, Jan-Ole, Dierlamm, Alexander Hermann, Nurnberg, Andreas Matthias
Lenguaje:	eng
Publicado:	2020
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/2798346

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