Atomic surface structure of MOVPE-prepared GaP(1 1 1)B

Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtual substrates, we investigate the atomic structure...

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Detalles Bibliográficos
Autores principales: Kleinschmidt, P, Mutombo, P, Berthold, T, Paszuk, A, Steidl, M, Ecke, G, Nägelein, A, Koppka, C, Supplie, O, Krischok, S, Romanyuk, O, Himmerlich, M, Hannappel, T
Lenguaje:eng
Publicado: 2020
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.apsusc.2020.147346
http://cds.cern.ch/record/2800446

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