LPNHE-FBK Thin n-on-p Pixel Sensors for HL-LHC Upgrade and Beyond

In view of the LHC upgrade phase towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. This paper reports on the last n-on-p pixel productions made by a collaboration between the FBK-CMM and the LPNHE in Paris, with some focus on the latest designs of thin sensors bump-bonded to the RD53A prototype chip, featuring a 100 × 25 and 50 × 50 µm^2 pixel cells. An overview of 2019–2020 test-beam results for the produced devices will be given, with a special perspective to the sensor design for the ATLAS ITk pixel construction. Preliminary results for new 50 µm thick n-on-p pixel sensors, still produced by LPNHE at FBK-CMM will be also presented.