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Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon

We present the results of an experimental study of multiple scattering of positively charged high-energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the si...

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Autores principales: Scandale, W., Arduini, G., Cerutti, F., Esposito, L.S., Garattini, M., Gilardoni, S., Losito, R., Masi, A., Mirarchi, D., Montesano, S., Redaelli, S., Rossi, R., Smirnov, G., Burmistrov, L., Dubos, S., Puill, V., Stocchi, A., Bandiera, L., Guidi, V., Mazzolari, A., Romangnoni, M., Murtas, F., Addesa, F.M., Cavoto, G., Iacoangeli, F., Galluccio, F., Afonin, A.G., Chesnokov, Yu. A., Durum, A.A., Maisheev, V.A., Sandomirskiy, Yu. E., Yanovich, A.A., Kovalenko, A.D., Taratin, A.M., Denisov, A.S., Gavrikov, Yu. A., Ivanov, Yu. M., Malyarenko, L.G., Borg, J., James, T., Hall, G., Pesaresi, M.
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1140/epjp/s13360-022-03034-6
http://cds.cern.ch/record/2801248
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author Scandale, W.
Arduini, G.
Cerutti, F.
Esposito, L.S.
Garattini, M.
Gilardoni, S.
Losito, R.
Masi, A.
Mirarchi, D.
Montesano, S.
Redaelli, S.
Rossi, R.
Smirnov, G.
Burmistrov, L.
Dubos, S.
Puill, V.
Stocchi, A.
Bandiera, L.
Guidi, V.
Mazzolari, A.
Romangnoni, M.
Murtas, F.
Addesa, F.M.
Cavoto, G.
Iacoangeli, F.
Galluccio, F.
Afonin, A.G.
Chesnokov, Yu. A.
Durum, A.A.
Maisheev, V.A.
Sandomirskiy, Yu. E.
Yanovich, A.A.
Kovalenko, A.D.
Taratin, A.M.
Denisov, A.S.
Gavrikov, Yu. A.
Ivanov, Yu. M.
Malyarenko, L.G.
Borg, J.
James, T.
Hall, G.
Pesaresi, M.
author_facet Scandale, W.
Arduini, G.
Cerutti, F.
Esposito, L.S.
Garattini, M.
Gilardoni, S.
Losito, R.
Masi, A.
Mirarchi, D.
Montesano, S.
Redaelli, S.
Rossi, R.
Smirnov, G.
Burmistrov, L.
Dubos, S.
Puill, V.
Stocchi, A.
Bandiera, L.
Guidi, V.
Mazzolari, A.
Romangnoni, M.
Murtas, F.
Addesa, F.M.
Cavoto, G.
Iacoangeli, F.
Galluccio, F.
Afonin, A.G.
Chesnokov, Yu. A.
Durum, A.A.
Maisheev, V.A.
Sandomirskiy, Yu. E.
Yanovich, A.A.
Kovalenko, A.D.
Taratin, A.M.
Denisov, A.S.
Gavrikov, Yu. A.
Ivanov, Yu. M.
Malyarenko, L.G.
Borg, J.
James, T.
Hall, G.
Pesaresi, M.
author_sort Scandale, W.
collection CERN
description We present the results of an experimental study of multiple scattering of positively charged high-energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.
id cern-2801248
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2022
record_format invenio
spelling cern-28012482023-01-31T08:31:58Zdoi:10.1140/epjp/s13360-022-03034-6http://cds.cern.ch/record/2801248engScandale, W.Arduini, G.Cerutti, F.Esposito, L.S.Garattini, M.Gilardoni, S.Losito, R.Masi, A.Mirarchi, D.Montesano, S.Redaelli, S.Rossi, R.Smirnov, G.Burmistrov, L.Dubos, S.Puill, V.Stocchi, A.Bandiera, L.Guidi, V.Mazzolari, A.Romangnoni, M.Murtas, F.Addesa, F.M.Cavoto, G.Iacoangeli, F.Galluccio, F.Afonin, A.G.Chesnokov, Yu. A.Durum, A.A.Maisheev, V.A.Sandomirskiy, Yu. E.Yanovich, A.A.Kovalenko, A.D.Taratin, A.M.Denisov, A.S.Gavrikov, Yu. A.Ivanov, Yu. M.Malyarenko, L.G.Borg, J.James, T.Hall, G.Pesaresi, M.Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline siliconphysics.acc-phAccelerators and Storage RingsWe present the results of an experimental study of multiple scattering of positively charged high-energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.We present the results of an experimental study of multiple scattering of positively charged high energy particles in bent samples of monocrystalline silicon. This work confirms the recently discovered effect of a strong reduction in the rms multiple scattering angle of particles channeled in the silicon (111) plane. The effect is observed in the plane orthogonal to the bending plane. We show in detail the influence of angular constraints on the magnitude of the effect. Comparison of the multiple scattering process at different energies indicates a violation of the law of inverse proportionality of the rms angle of channeled particles with energy. By increasing the statistics, we have improved the results of multiple scattering measurements for particles moving, but not channeled, in silicon crystals.arXiv:2201.09655oai:cds.cern.ch:28012482022-01-24
spellingShingle physics.acc-ph
Accelerators and Storage Rings
Scandale, W.
Arduini, G.
Cerutti, F.
Esposito, L.S.
Garattini, M.
Gilardoni, S.
Losito, R.
Masi, A.
Mirarchi, D.
Montesano, S.
Redaelli, S.
Rossi, R.
Smirnov, G.
Burmistrov, L.
Dubos, S.
Puill, V.
Stocchi, A.
Bandiera, L.
Guidi, V.
Mazzolari, A.
Romangnoni, M.
Murtas, F.
Addesa, F.M.
Cavoto, G.
Iacoangeli, F.
Galluccio, F.
Afonin, A.G.
Chesnokov, Yu. A.
Durum, A.A.
Maisheev, V.A.
Sandomirskiy, Yu. E.
Yanovich, A.A.
Kovalenko, A.D.
Taratin, A.M.
Denisov, A.S.
Gavrikov, Yu. A.
Ivanov, Yu. M.
Malyarenko, L.G.
Borg, J.
James, T.
Hall, G.
Pesaresi, M.
Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
title Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
title_full Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
title_fullStr Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
title_full_unstemmed Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
title_short Multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
title_sort multiple scattering of channeled and non-channeled positively charged particles in bent monocrystalline silicon
topic physics.acc-ph
Accelerators and Storage Rings
url https://dx.doi.org/10.1140/epjp/s13360-022-03034-6
http://cds.cern.ch/record/2801248
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