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Characterization of Irradiated Boron, Carbon-Enriched and Gallium Si-on-Si Wafer Low Gain Avalanche Detectors
Low Gain Avalanche Detectors (LGADs) are n-on-p silicon sensors with an extra doped p-layer below the n-p junction which provides signal amplification. The moderate gain of these sensors, together with the relatively thin active region, provides excellent timing performance for Minimum Ionizing Part...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2021
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.3390/instruments6010002 http://cds.cern.ch/record/2804036 |