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Performance of the FASTPIX Sub-Nanosecond CMOS Pixel Sensor Demonstrator
Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process, targeting sub-nanosecond timing measurements for single ionizing particles. It features a small collection electrode design on a 25 micron thick epitaxial lay...
Autores principales: | , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2022
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.3390/instruments6010013 http://cds.cern.ch/record/2806099 |
Sumario: | Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process, targeting sub-nanosecond timing measurements for single ionizing particles. It features a small collection electrode design on a 25 micron thick epitaxial layer and contains 32 mini matrices of 68 hexagonal pixels each, with pixel pitches ranging from 8.66 to 20 micron. Four pixels are transmitting an analog output signal and 64 are transmitting binary hit information. Various design variations are explored, aiming at accelerating the charge collection and making the timing of the charge collection more uniform over the pixel area. Signal treatment of the analog waveforms, as well as reconstruction of time and charge information, is carried out off-chip. This contribution introduces the design of the sensor and readout system and presents the first performance results for 10 μm and 20 μm pixel pitch achieved in measurements with particle beams. |
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