Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology

A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 1...

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Autores principales: Iacobucci, G., Paolozzi, L., Valerio, P., Moretti, T., Cadoux, F., Cardarelli, R., Cardella, R., Débieux, S., Favre, Y., Ferrere, D., Gonzalez-Sevilla, S., Gurimskaya, Y., Kotitsa, R., Magliocca, C., Martinelli, F., Milanesio, M., Münker, M., Nessi, M., Picardi, A., Saidi, J., Rücker, H., Vicente Barreto Pinto, M., Zambito, S.
Lenguaje:eng
Publicado: 2021
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/17/02/P02019
http://cds.cern.ch/record/2806200
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author Iacobucci, G.
Paolozzi, L.
Valerio, P.
Moretti, T.
Cadoux, F.
Cardarelli, R.
Cardella, R.
Débieux, S.
Favre, Y.
Ferrere, D.
Gonzalez-Sevilla, S.
Gurimskaya, Y.
Kotitsa, R.
Magliocca, C.
Martinelli, F.
Milanesio, M.
Münker, M.
Nessi, M.
Picardi, A.
Saidi, J.
Rücker, H.
Vicente Barreto Pinto, M.
Zambito, S.
author_facet Iacobucci, G.
Paolozzi, L.
Valerio, P.
Moretti, T.
Cadoux, F.
Cardarelli, R.
Cardella, R.
Débieux, S.
Favre, Y.
Ferrere, D.
Gonzalez-Sevilla, S.
Gurimskaya, Y.
Kotitsa, R.
Magliocca, C.
Martinelli, F.
Milanesio, M.
Münker, M.
Nessi, M.
Picardi, A.
Saidi, J.
Rücker, H.
Vicente Barreto Pinto, M.
Zambito, S.
author_sort Iacobucci, G.
collection CERN
description A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9$_{-0.2}$ $^{+0.1}$)% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 μA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.
id cern-2806200
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2021
record_format invenio
spelling cern-28062002023-06-29T04:25:05Zdoi:10.1088/1748-0221/17/02/P02019http://cds.cern.ch/record/2806200engIacobucci, G.Paolozzi, L.Valerio, P.Moretti, T.Cadoux, F.Cardarelli, R.Cardella, R.Débieux, S.Favre, Y.Ferrere, D.Gonzalez-Sevilla, S.Gurimskaya, Y.Kotitsa, R.Magliocca, C.Martinelli, F.Milanesio, M.Münker, M.Nessi, M.Picardi, A.Saidi, J.Rücker, H.Vicente Barreto Pinto, M.Zambito, S.Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technologyphysics.ins-detDetectors and Experimental TechniquesA monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of (99.9$_{-0.2}$ $^{+0.1}$)% was measured together with a time resolution of (36.4 ± 0.8) ps at the highest preamplifier bias current working point of 150 μA and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 $\mu$m. Three analog pixels were calibrated in laboratory with radioactive sources and tested in a 180 GeV/c pion beamline at the CERN SPS. A detection efficiency of $\left(99.9^{+0.1}_{-0.2}\right)$% was measured together with a time resolution of $(36.4 \pm 0.8)$ps at the highest preamplifier bias current working point of 150 $\mu$A and at a sensor bias voltage of 160 V. The ASIC was also characterized at lower bias voltage and preamplifier current.arXiv:2112.08999oai:cds.cern.ch:28062002021-12-16
spellingShingle physics.ins-det
Detectors and Experimental Techniques
Iacobucci, G.
Paolozzi, L.
Valerio, P.
Moretti, T.
Cadoux, F.
Cardarelli, R.
Cardella, R.
Débieux, S.
Favre, Y.
Ferrere, D.
Gonzalez-Sevilla, S.
Gurimskaya, Y.
Kotitsa, R.
Magliocca, C.
Martinelli, F.
Milanesio, M.
Münker, M.
Nessi, M.
Picardi, A.
Saidi, J.
Rücker, H.
Vicente Barreto Pinto, M.
Zambito, S.
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
title Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
title_full Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
title_fullStr Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
title_full_unstemmed Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
title_short Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
title_sort efficiency and time resolution of monolithic silicon pixel detectors in sige bicmos technology
topic physics.ins-det
Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/17/02/P02019
http://cds.cern.ch/record/2806200
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