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The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
In this work, the thermally stimulated current (TSC) technique has been used to investigate the properties of the radiation-induced interstitial boron and interstitial oxygen defect complex by 23-GeV ( $E_{\text {kin}}$ ) protons, including activation energy, defect concentration, as well as the a...
| Autores principales: | , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2022.3148030 http://cds.cern.ch/record/2806208 |