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Effects of Thermal Neutron Irradiation on a Self-Refresh DRAM
In this study, static and dynamic test methods were used to define the response of a self-refresh DRAM under thermal neutron irradiation. The neutron-induced failures were investigated and characterized by event cross-sections, soft-error rate and bitmaps evaluations, leading to an identification of...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2020
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/dtis48698.2020.9080918 http://cds.cern.ch/record/2807280 |
| Sumario: | In this study, static and dynamic test methods were
used to define the response of a self-refresh DRAM under
thermal neutron irradiation. The neutron-induced failures were
investigated and characterized by event cross-sections, soft-error
rate and bitmaps evaluations, leading to an identification of
permanent and temporarily stuck cells, block errors, and singlebit upsets. |
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