Direct evidence of Be as an amphoteric dopant in GaN

The interest in Be as an impurity in GaN stems from the challenge to understand why GaN can be doped p type with Mg, while this does not work for Be. While theory has actually predicted an acceptor level for Be that is shallower than Mg, it was also argued that Be is not a suitable acceptor because...

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Detalles Bibliográficos
Autores principales: Wahl, U., Correia, J. G., Costa, A. R. G., Lima, T. A. L., Moens, J., Kappers, M. J., da Silva, M. R., Pereira, L. M. C., Vantomme, A.
Publicado: 2022
Acceso en línea:https://dx.doi.org/10.1103/PhysRevB.105.184112
http://cds.cern.ch/record/2810652

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