Cargando…

Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center

Detalles Bibliográficos
Autores principales:	Faul, J, Neuhold, G, Ley, L, Fraxedas, J, Zöllner, S, Riley, J D, Leckey, R C G
Lenguaje:	eng
Publicado:	1993
Materias:	Condensed Matter
Acceso en línea:	https://dx.doi.org/10.1103/PhysRevB.48.14301 http://cds.cern.ch/record/281199

Ejemplares similares

Conduction-band states and surface core excitons in InSb(110) and other III-V compounds
por: Neuhold, G, et al.
Publicado: (1994)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

Optical Properties of GaSb Nanofibers
por: Zhou, Xiuli, et al.
Publicado: (2010)

Direct evidence for implanted Fe on substitutional Ga sites in GaN
por: Wahl, U, et al.
Publicado: (2003)

Creation of Ga$_{As}$ antisites in GaAs by transmutation of radioactive $^{71}$As$_{As}$ to stable $^{71}$Ga$_{As}$
por: Magerle, R, et al.
Publicado: (1997)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Amphoteric arsenic in GaN
por: Wahl, U, et al.
Publicado: (2007)

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)

Emission channeling studies of Pr in GaN
por: Wahl, U, et al.
Publicado: (2003)

Characterization of inactive carbon in GaAs
por: Moll, A J, et al.
Publicado: (1994)

Properties of Doped GaSb Whiskers at Low Temperatures
por: Khytruk, Igor, et al.
Publicado: (2017)

Local Structure and Magnetism of (Ga,Mn)As
por: De Lemos Lima, Tiago Abel
Publicado: (2017)

Annealing of ion-implanted GaN
por: Burchard, A, et al.
Publicado: (1999)

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
por: Ikyo, A. B., et al.
Publicado: (2016)

Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells
por: Shoji, Yasushi, et al.
Publicado: (2021)

Lattice location and optical activation of rare earth implanted GaN
por: Wahl, U, et al.
Publicado: (2003)

Implantation doping and hydrogen passivation of GaN
por: Burchard, A, et al.
Publicado: (1997)

Evidence of N substitution by Mn in GaN
por: Pereira, LMC, et al.
Publicado: (2013)

Lattice site location and annealing behaviour of Ca and Sr implanted GaN
por: De Vries, Bart, et al.
Publicado: (2006)

Emission channeling experiments from the decay of $^{149}$Gd to $^{149}$Eu in GaN
por: De Vries, B, et al.
Publicado: (2003)

Enhanced thermoelectric properties of Zn-doped GaSb nanocomposites
por: Fu, Qiang, et al.
Publicado: (2020)

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
por: Li, Jiakai, et al.
Publicado: (2021)

Lattice sites and damage annealing of Er in low-dose implanted GaAs
por: Wahl, U, et al.
Publicado: (2003)

Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
por: Rogowicz, E., et al.
Publicado: (2022)

Influence of O and C co-implantation on the lattice site of Er in GaN
por: De Vries, Bart, et al.
Publicado: (2004)

Identification of the interstitial Mn site in ferromagnetic (Ga,Mn)As
por: De Lemos Lima, Tiago Abel, et al.
Publicado: (2015)

Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling
por: De Vries, B, et al.
Publicado: (2003)

Direct Band Gap Gallium Antimony Phosphide (GaSb(x)P(1−x)) Alloys
por: Russell, H. B., et al.
Publicado: (2016)

Ion implantation of Cd and Ag into AlN and GaN
por: Miranda, Sérgio M C, et al.
Publicado: (2012)

Handbook on physical properties of Ge, Si, GaAs and InP
por: Dargys, Adolfas, et al.
Publicado: (1994)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
por: Xie, Haiwu, et al.
Publicado: (2021)

Arsenic in ZnO and GaN: substitutional cation or anion sites?
por: Wahl, Ulrich, et al.
Publicado: (2007)

Perturbed angular correlation measurements and lattice site location of Br in GaAs
por: Wehner, M, et al.
Publicado: (1997)

Stability and diffusion of interstitital and substitutional Mn in GaAs of different doping types
por: Pereira, LMC, et al.
Publicado: (2011)

Identification of Ag and Cd photoluminescence in $^{111}$Ag-doped GaN
por: Stötzler, A, et al.
Publicado: (1999)

In-plane optical anisotropy of InAs/GaSb superlattices with alternate interfaces
por: Wu, Shujie, et al.
Publicado: (2013)

Evidence for a topological excitonic insulator in InAs/GaSb bilayers
por: Du, Lingjie, et al.
Publicado: (2017)

Metallization and Electrical Transport Behaviors of GaSb under High-Pressure
por: Zhang, Guozhao, et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_1iudkit80l4qjqevcspshnulc1