Characterization of irradiated passive CMOS sensors for tracking in HEP experiments

The upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) as well as future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. Using production lines of industrial CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors would be most beneficial in terms of availability, throughput and cost. First samples of pixel sensors coming from the LFoundry production line have already been tested and showed good performance up to irradiation levels of 1 x 10$^{16}$ n$_{eq}\cdot$cm$^{-2}$ for their potential operations as sensors for the CMS inner tracker. This paper will focus on the characterization of pixel modules at high irradiation levels, up to 2 x 10$^{16}$ n$_{eq}\cdot$cm$^{-2}$, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests.