High precision scalable power converter for accelerator magnets

The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) to be an excellent replacement of existing Silicon Insulated Gate Bipolar Transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9 ppm) supplying a 0.05 H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.