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High precision scalable power converter for accelerator magnets
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) to be an excellent replacement of existing Silicon Insulated Gate Bipolar Transistors (IGBTs) technolo...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1748-0221/17/03/C03021 http://cds.cern.ch/record/2823923 |