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Amorphization of ZnSe by ion implantation at low temperatures
Radioactive Cd and Se ions were implanted into high-resistivity ZnSe single crystals around 60 K and 300 K. Their lattice sites were determined by measuring the channelling and blocking effects of the emitted conversion electrons or positrons directly after implantation and after annealing at differ...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1995
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/283361 |