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An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters

A new method for enhancing the sensitivity of the Floating Gate DOSimeter (FGDOS) has been investigated. By increasing the electric field in the silicon dioxide, it is possible to improve the fractional yield of collection of the electron–hole pairs, thus to increase the device’s sensitivity. In par...

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Autores principales: Rizzo, Marta, Brucoli, Matteo, Danzeca, Salvatore, Masi, Alessandro, Pineda, Àlvaro, Mas, Bartomeu Servera
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1109/TNS.2022.3185397
http://cds.cern.ch/record/2835479
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author Rizzo, Marta
Brucoli, Matteo
Danzeca, Salvatore
Masi, Alessandro
Pineda, Àlvaro
Mas, Bartomeu Servera
author_facet Rizzo, Marta
Brucoli, Matteo
Danzeca, Salvatore
Masi, Alessandro
Pineda, Àlvaro
Mas, Bartomeu Servera
author_sort Rizzo, Marta
collection CERN
description A new method for enhancing the sensitivity of the Floating Gate DOSimeter (FGDOS) has been investigated. By increasing the electric field in the silicon dioxide, it is possible to improve the fractional yield of collection of the electron–hole pairs, thus to increase the device’s sensitivity. In particular, a sensitivity enhancement implies a proportional improvement of the sensor’s dose resolution. Such an amelioration would dramatically improve the dosimeter’s performance in low dose rate environments, especially when only short time windows are available for measurements. Moreover, a higher electric field in the floating gate oxide makes for an improved sensitivity degradation rate throughout the device’s radiation lifetime. Results, both from analog and digital test chips, are presented, proving the effectiveness of the enhancement and its effect on the FGDOS’ sensitivity degradation rate. Finally, both aspects are discussed and explained from a theoretical point of view.
id cern-2835479
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2022
record_format invenio
spelling cern-28354792022-10-04T21:21:54Zdoi:10.1109/TNS.2022.3185397http://cds.cern.ch/record/2835479engRizzo, MartaBrucoli, MatteoDanzeca, SalvatoreMasi, AlessandroPineda, ÀlvaroMas, Bartomeu ServeraAn Enhanced Sensitivity Operation Mode for Floating Gate DosimetersDetectors and Experimental TechniquesA new method for enhancing the sensitivity of the Floating Gate DOSimeter (FGDOS) has been investigated. By increasing the electric field in the silicon dioxide, it is possible to improve the fractional yield of collection of the electron–hole pairs, thus to increase the device’s sensitivity. In particular, a sensitivity enhancement implies a proportional improvement of the sensor’s dose resolution. Such an amelioration would dramatically improve the dosimeter’s performance in low dose rate environments, especially when only short time windows are available for measurements. Moreover, a higher electric field in the floating gate oxide makes for an improved sensitivity degradation rate throughout the device’s radiation lifetime. Results, both from analog and digital test chips, are presented, proving the effectiveness of the enhancement and its effect on the FGDOS’ sensitivity degradation rate. Finally, both aspects are discussed and explained from a theoretical point of view.oai:cds.cern.ch:28354792022
spellingShingle Detectors and Experimental Techniques
Rizzo, Marta
Brucoli, Matteo
Danzeca, Salvatore
Masi, Alessandro
Pineda, Àlvaro
Mas, Bartomeu Servera
An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
title An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
title_full An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
title_fullStr An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
title_full_unstemmed An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
title_short An Enhanced Sensitivity Operation Mode for Floating Gate Dosimeters
title_sort enhanced sensitivity operation mode for floating gate dosimeters
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2022.3185397
http://cds.cern.ch/record/2835479
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