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Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors

This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 $\mu$m and an area...

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Autores principales: Carnesecchi, F., Strazzi, S., Alici, A., Arcidiacono, R., Borghi, G., Boscardin, M., Cartiglia, N., Centis Vignali, M., Cavazza, D., Dalla Betta, G. -F., Durando, S., Ferrero, M., Ficorella, F., Ali, O. Hammad, Mandurrino, M., Margotti, A., Menzio, L., Nania, R., Pancheri, L., Paternoster, G., Scioli, G., Siviero, F., Sola, V., Tornago, M., Vignola, G.
Lenguaje:eng
Publicado: 2022
Materias:
Acceso en línea:https://dx.doi.org/10.1140/epjp/s13360-022-03619-1
http://cds.cern.ch/record/2846003
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author Carnesecchi, F.
Strazzi, S.
Alici, A.
Arcidiacono, R.
Borghi, G.
Boscardin, M.
Cartiglia, N.
Centis Vignali, M.
Cavazza, D.
Dalla Betta, G. -F.
Durando, S.
Ferrero, M.
Ficorella, F.
Ali, O. Hammad
Mandurrino, M.
Margotti, A.
Menzio, L.
Nania, R.
Pancheri, L.
Paternoster, G.
Scioli, G.
Siviero, F.
Sola, V.
Tornago, M.
Vignola, G.
author_facet Carnesecchi, F.
Strazzi, S.
Alici, A.
Arcidiacono, R.
Borghi, G.
Boscardin, M.
Cartiglia, N.
Centis Vignali, M.
Cavazza, D.
Dalla Betta, G. -F.
Durando, S.
Ferrero, M.
Ficorella, F.
Ali, O. Hammad
Mandurrino, M.
Margotti, A.
Menzio, L.
Nania, R.
Pancheri, L.
Paternoster, G.
Scioli, G.
Siviero, F.
Sola, V.
Tornago, M.
Vignola, G.
author_sort Carnesecchi, F.
collection CERN
description This paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 $\mu$m and an area of 1 $\times$ 1 $\text {mm}^2$ have been considered, together with an additional HPK 50-$\mu$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 and 240 V has been obtained for the 25 and 35 $\mu$m thick UFSDs, respectively.
id cern-2846003
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2022
record_format invenio
spelling cern-28460032023-03-31T10:27:07Zdoi:10.1140/epjp/s13360-022-03619-1http://cds.cern.ch/record/2846003engCarnesecchi, F.Strazzi, S.Alici, A.Arcidiacono, R.Borghi, G.Boscardin, M.Cartiglia, N.Centis Vignali, M.Cavazza, D.Dalla Betta, G. -F.Durando, S.Ferrero, M.Ficorella, F.Ali, O. HammadMandurrino, M.Margotti, A.Menzio, L.Nania, R.Pancheri, L.Paternoster, G.Scioli, G.Siviero, F.Sola, V.Tornago, M.Vignola, G.Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectorsDetectors and Experimental TechniquesThis paper presents the measurements on first very thin Ultra-Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 and 35 $\mu$m and an area of 1 $\times$ 1 $\text {mm}^2$ have been considered, together with an additional HPK 50-$\mu$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 and 240 V has been obtained for the 25 and 35 $\mu$m thick UFSDs, respectively.This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $\mu$m and 35 $\mu$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$\mu$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $\mu$m thick UFSDs, respectively.arXiv:2208.05717oai:cds.cern.ch:28460032022-08-11
spellingShingle Detectors and Experimental Techniques
Carnesecchi, F.
Strazzi, S.
Alici, A.
Arcidiacono, R.
Borghi, G.
Boscardin, M.
Cartiglia, N.
Centis Vignali, M.
Cavazza, D.
Dalla Betta, G. -F.
Durando, S.
Ferrero, M.
Ficorella, F.
Ali, O. Hammad
Mandurrino, M.
Margotti, A.
Menzio, L.
Nania, R.
Pancheri, L.
Paternoster, G.
Scioli, G.
Siviero, F.
Sola, V.
Tornago, M.
Vignola, G.
Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
title Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
title_full Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
title_fullStr Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
title_full_unstemmed Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
title_short Beam test results of 25 and 35 $\mu$m thick FBK ultra-fast silicon detectors
title_sort beam test results of 25 and 35 $\mu$m thick fbk ultra-fast silicon detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1140/epjp/s13360-022-03619-1
http://cds.cern.ch/record/2846003
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