Pulsed Electron Beam induced SEU Effects in a SRAM memory

Single Event Effects (SEEs) correlated to pulsed beam effects induced by high energy electrons in a very well-established device, such as the ESA SEU (Singe Event Upset) monitor, are investigated in this paper. Measurements with different electron intensities have been performed at VESPER (The Very...

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Detalles Bibliográficos
Autores principales: Wyrwoll, Vanessa, Røed, Ketil, Alía, Rubén García, Delfs, Björn, Coronetti, Andrea, Farabolini, Wilfrid, Gilardi, Antonio, Corsini, Roberto
Lenguaje:eng
Publicado: 2021
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/RADECS53308.2021.9954561
http://cds.cern.ch/record/2846305

Internet

https://dx.doi.org/10.1109/RADECS53308.2021.9954561
http://cds.cern.ch/record/2846305

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