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MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The “MALTA-Czochralski (MALTA-Cz)” full size DMAPS sensor ha...

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Autores principales: Pernegger, H., Allport, P., Berlea, D.V., Birman, A., Bortoletto, D., Buttar, C., Charbon, E., Dachs, F., Dao, V., Denizli, H., Dobrijevic, D., Dyndal, M., Fenigstein, A., de Acedo, L. Flores Sanz, Freeman, P., Gabrielli, A., Gazi, M., Gonella, L., Gonzalez, V., Gustavino, G., Haim, A., Kugathasan, T., LeBlanc, M., Munker, M., Oyulmaz, K.Y., Piro, F., Riedler, P., Sandaker, H., Schioppa, E.J., Sharma, A., Snoeys, W., Solans Sanchez, C., Suligoj, T., Toledano, E., van Rijnbach, M., Nunez, M. Vazquez, Weick, J., Worm, S., Zoubir, A.M.
Lenguaje:eng
Publicado: 2023
Materias:
Acceso en línea:https://dx.doi.org/10.1088/1748-0221/18/09/P09018
http://cds.cern.ch/record/2847511
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author Pernegger, H.
Allport, P.
Berlea, D.V.
Birman, A.
Bortoletto, D.
Buttar, C.
Charbon, E.
Dachs, F.
Dao, V.
Denizli, H.
Dobrijevic, D.
Dyndal, M.
Fenigstein, A.
de Acedo, L. Flores Sanz
Freeman, P.
Gabrielli, A.
Gazi, M.
Gonella, L.
Gonzalez, V.
Gustavino, G.
Haim, A.
Kugathasan, T.
LeBlanc, M.
Munker, M.
Oyulmaz, K.Y.
Piro, F.
Riedler, P.
Sandaker, H.
Schioppa, E.J.
Sharma, A.
Snoeys, W.
Solans Sanchez, C.
Suligoj, T.
Toledano, E.
van Rijnbach, M.
Nunez, M. Vazquez
Weick, J.
Worm, S.
Zoubir, A.M.
author_facet Pernegger, H.
Allport, P.
Berlea, D.V.
Birman, A.
Bortoletto, D.
Buttar, C.
Charbon, E.
Dachs, F.
Dao, V.
Denizli, H.
Dobrijevic, D.
Dyndal, M.
Fenigstein, A.
de Acedo, L. Flores Sanz
Freeman, P.
Gabrielli, A.
Gazi, M.
Gonella, L.
Gonzalez, V.
Gustavino, G.
Haim, A.
Kugathasan, T.
LeBlanc, M.
Munker, M.
Oyulmaz, K.Y.
Piro, F.
Riedler, P.
Sandaker, H.
Schioppa, E.J.
Sharma, A.
Snoeys, W.
Solans Sanchez, C.
Suligoj, T.
Toledano, E.
van Rijnbach, M.
Nunez, M. Vazquez
Weick, J.
Worm, S.
Zoubir, A.M.
author_sort Pernegger, H.
collection CERN
description Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The “MALTA-Czochralski (MALTA-Cz)” full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The design targets radiation hardness of > 10$^{15}$ (1 MeV) n$_{eq}$/cm$^{2}$ and 100 Mrad TID. The sensor shall operate as tracking sensor with a spatial resolution of ≈ 10 μm and be able to cope with hit rates in excess of 100 MHz/cm$^{2}$ at the LHC bunch crossing frequency of 40 MHz. The 512 × 512 pixel sensor uses small collection electrodes (3.5 μm) to minimize capacitance. The small pixel size (36.4 × 36.4 μm$^{2}$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging.The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of 2 × 10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be σ = 2 ns.
id cern-2847511
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2023
record_format invenio
spelling cern-28475112023-09-16T05:14:44Zdoi:10.1088/1748-0221/18/09/P09018http://cds.cern.ch/record/2847511engPernegger, H.Allport, P.Berlea, D.V.Birman, A.Bortoletto, D.Buttar, C.Charbon, E.Dachs, F.Dao, V.Denizli, H.Dobrijevic, D.Dyndal, M.Fenigstein, A.de Acedo, L. Flores SanzFreeman, P.Gabrielli, A.Gazi, M.Gonella, L.Gonzalez, V.Gustavino, G.Haim, A.Kugathasan, T.LeBlanc, M.Munker, M.Oyulmaz, K.Y.Piro, F.Riedler, P.Sandaker, H.Schioppa, E.J.Sharma, A.Snoeys, W.Solans Sanchez, C.Suligoj, T.Toledano, E.van Rijnbach, M.Nunez, M. VazquezWeick, J.Worm, S.Zoubir, A.M.MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substratephysics.ins-detDetectors and Experimental TechniquesDepleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The “MALTA-Czochralski (MALTA-Cz)” full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The design targets radiation hardness of > 10$^{15}$ (1 MeV) n$_{eq}$/cm$^{2}$ and 100 Mrad TID. The sensor shall operate as tracking sensor with a spatial resolution of ≈ 10 μm and be able to cope with hit rates in excess of 100 MHz/cm$^{2}$ at the LHC bunch crossing frequency of 40 MHz. The 512 × 512 pixel sensor uses small collection electrodes (3.5 μm) to minimize capacitance. The small pixel size (36.4 × 36.4 μm$^{2}$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging.The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of 2 × 10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be σ = 2 ns.Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The small pixel size ($36.4\times 36.4$~$\mu$m$^2$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging. The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of $2\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be $\sigma=2$~ns.arXiv:2301.03912oai:cds.cern.ch:28475112023-01-10
spellingShingle physics.ins-det
Detectors and Experimental Techniques
Pernegger, H.
Allport, P.
Berlea, D.V.
Birman, A.
Bortoletto, D.
Buttar, C.
Charbon, E.
Dachs, F.
Dao, V.
Denizli, H.
Dobrijevic, D.
Dyndal, M.
Fenigstein, A.
de Acedo, L. Flores Sanz
Freeman, P.
Gabrielli, A.
Gazi, M.
Gonella, L.
Gonzalez, V.
Gustavino, G.
Haim, A.
Kugathasan, T.
LeBlanc, M.
Munker, M.
Oyulmaz, K.Y.
Piro, F.
Riedler, P.
Sandaker, H.
Schioppa, E.J.
Sharma, A.
Snoeys, W.
Solans Sanchez, C.
Suligoj, T.
Toledano, E.
van Rijnbach, M.
Nunez, M. Vazquez
Weick, J.
Worm, S.
Zoubir, A.M.
MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
title MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
title_full MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
title_fullStr MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
title_full_unstemmed MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
title_short MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
title_sort malta-cz: a radiation hard full-size monolithic cmos sensor with small electrodes on high-resistivity czochralski substrate
topic physics.ins-det
Detectors and Experimental Techniques
url https://dx.doi.org/10.1088/1748-0221/18/09/P09018
http://cds.cern.ch/record/2847511
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