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Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers
The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this pape...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2022
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/2847529 |
| _version_ | 1780976792767561728 |
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| author | Kieseler, Jan Almeida, Pedro Goncalo Dias Kaluzinska, Oliwia Mühlnikel, Marie Christin Diehl, Leena Sicking, Eva Zehetner, Phillip |
| author_facet | Kieseler, Jan Almeida, Pedro Goncalo Dias Kaluzinska, Oliwia Mühlnikel, Marie Christin Diehl, Leena Sicking, Eva Zehetner, Phillip |
| author_sort | Kieseler, Jan |
| collection | CERN |
| description | The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$. |
| id | cern-2847529 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2022 |
| record_format | invenio |
| spelling | cern-28475292023-06-14T02:44:18Zhttp://cds.cern.ch/record/2847529engKieseler, JanAlmeida, Pedro Goncalo DiasKaluzinska, OliwiaMühlnikel, Marie ChristinDiehl, LeenaSicking, EvaZehetner, PhillipIsothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafershep-exParticle Physics - Experimentphysics.ins-detDetectors and Experimental TechniquesThe high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$.arXiv:2211.04849oai:cds.cern.ch:28475292022-11-09 |
| spellingShingle | hep-ex Particle Physics - Experiment physics.ins-det Detectors and Experimental Techniques Kieseler, Jan Almeida, Pedro Goncalo Dias Kaluzinska, Oliwia Mühlnikel, Marie Christin Diehl, Leena Sicking, Eva Zehetner, Phillip Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| title | Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| title_full | Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| title_fullStr | Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| title_full_unstemmed | Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| title_short | Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| title_sort | isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers |
| topic | hep-ex Particle Physics - Experiment physics.ins-det Detectors and Experimental Techniques |
| url | http://cds.cern.ch/record/2847529 |
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