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Proton Direct Ionization Upsets at Tens of MeV
Experimental monoenergetic proton single-event upset (SEU) cross sections of a 65-nm low core-voltage static random access memory (SRAM) were found to be exceptionally high not only at low energies (< 3 MeV), but also at energies $>$ 3 MeV and extending up to tens of MeV. The SEU cross Sectio...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2022.3207877 http://cds.cern.ch/record/2856851 |