Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence

Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.

Detalles Bibliográficos
Autores principales: Ascázubi, Ricardo, Palomo, F Rogelio, Navarrete-Larive, Victoria, Quesada, Jose Manuel, Cortés-Giraldo, Miguel Antonio, Pavón-Rodriguez, Jose Antonio
Lenguaje:eng
Publicado: 2023
Acceso en línea:https://dx.doi.org/10.1109/LASCAS56464.2023.10108138
http://cds.cern.ch/record/2857856
Descripción
Sumario:Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.

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