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Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence

Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.

Detalles Bibliográficos
Autores principales: Ascázubi, Ricardo, Palomo, F Rogelio, Navarrete-Larive, Victoria, Quesada, Jose Manuel, Cortés-Giraldo, Miguel Antonio, Pavón-Rodriguez, Jose Antonio
Lenguaje:eng
Publicado: 2023
Acceso en línea:https://dx.doi.org/10.1109/LASCAS56464.2023.10108138
http://cds.cern.ch/record/2857856
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author Ascázubi, Ricardo
Palomo, F Rogelio
Navarrete-Larive, Victoria
Quesada, Jose Manuel
Cortés-Giraldo, Miguel Antonio
Pavón-Rodriguez, Jose Antonio
author_facet Ascázubi, Ricardo
Palomo, F Rogelio
Navarrete-Larive, Victoria
Quesada, Jose Manuel
Cortés-Giraldo, Miguel Antonio
Pavón-Rodriguez, Jose Antonio
author_sort Ascázubi, Ricardo
collection CERN
description Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.
id cern-2857856
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2023
record_format invenio
spelling cern-28578562023-05-15T12:24:07Zdoi:10.1109/LASCAS56464.2023.10108138http://cds.cern.ch/record/2857856engAscázubi, RicardoPalomo, F RogelioNavarrete-Larive, VictoriaQuesada, Jose ManuelCortés-Giraldo, Miguel AntonioPavón-Rodriguez, Jose AntonioNeutron Irradiation of Si-PIN Diodes and Laser Injection EquivalenceNeutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.oai:cds.cern.ch:28578562023
spellingShingle Ascázubi, Ricardo
Palomo, F Rogelio
Navarrete-Larive, Victoria
Quesada, Jose Manuel
Cortés-Giraldo, Miguel Antonio
Pavón-Rodriguez, Jose Antonio
Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
title Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
title_full Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
title_fullStr Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
title_full_unstemmed Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
title_short Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
title_sort neutron irradiation of si-pin diodes and laser injection equivalence
url https://dx.doi.org/10.1109/LASCAS56464.2023.10108138
http://cds.cern.ch/record/2857856
work_keys_str_mv AT ascazubiricardo neutronirradiationofsipindiodesandlaserinjectionequivalence
AT palomofrogelio neutronirradiationofsipindiodesandlaserinjectionequivalence
AT navarretelarivevictoria neutronirradiationofsipindiodesandlaserinjectionequivalence
AT quesadajosemanuel neutronirradiationofsipindiodesandlaserinjectionequivalence
AT cortesgiraldomiguelantonio neutronirradiationofsipindiodesandlaserinjectionequivalence
AT pavonrodriguezjoseantonio neutronirradiationofsipindiodesandlaserinjectionequivalence