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Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence
Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.
Autores principales: | , , , , , |
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Lenguaje: | eng |
Publicado: |
2023
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Acceso en línea: | https://dx.doi.org/10.1109/LASCAS56464.2023.10108138 http://cds.cern.ch/record/2857856 |
_version_ | 1780977591387160576 |
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author | Ascázubi, Ricardo Palomo, F Rogelio Navarrete-Larive, Victoria Quesada, Jose Manuel Cortés-Giraldo, Miguel Antonio Pavón-Rodriguez, Jose Antonio |
author_facet | Ascázubi, Ricardo Palomo, F Rogelio Navarrete-Larive, Victoria Quesada, Jose Manuel Cortés-Giraldo, Miguel Antonio Pavón-Rodriguez, Jose Antonio |
author_sort | Ascázubi, Ricardo |
collection | CERN |
description | Neutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy. |
id | cern-2857856 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2023 |
record_format | invenio |
spelling | cern-28578562023-05-15T12:24:07Zdoi:10.1109/LASCAS56464.2023.10108138http://cds.cern.ch/record/2857856engAscázubi, RicardoPalomo, F RogelioNavarrete-Larive, VictoriaQuesada, Jose ManuelCortés-Giraldo, Miguel AntonioPavón-Rodriguez, Jose AntonioNeutron Irradiation of Si-PIN Diodes and Laser Injection EquivalenceNeutron irradiation of Silicon-PIN diodes has been performed at the n_TOF facility at CERN. Transients are collected and compared to those generated by ultrafast laser. Deposited charge is characterized as a function of the neutron energy.oai:cds.cern.ch:28578562023 |
spellingShingle | Ascázubi, Ricardo Palomo, F Rogelio Navarrete-Larive, Victoria Quesada, Jose Manuel Cortés-Giraldo, Miguel Antonio Pavón-Rodriguez, Jose Antonio Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
title | Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
title_full | Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
title_fullStr | Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
title_full_unstemmed | Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
title_short | Neutron Irradiation of Si-PIN Diodes and Laser Injection Equivalence |
title_sort | neutron irradiation of si-pin diodes and laser injection equivalence |
url | https://dx.doi.org/10.1109/LASCAS56464.2023.10108138 http://cds.cern.ch/record/2857856 |
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