Source Switched Charge-Pump PLLs for High-Dose Radiation Environments

This article presents a radiation tolerant charge-pump phase-locked loop (PLL) with low static phase error variability suitable for high-performance clock systems in high-dose radiation environments. We investigate the use of source switching charge-pump architectures to minimize any voltage- or dos...

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Detalles Bibliográficos
Autores principales: Prinzie, Jeffrey, Biereigel, Stefan, Kulis, Szymon, Leitao, Pedro, Moreira, Paulo
Lenguaje:eng
Publicado: 2023
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1109/TNS.2022.3223969
http://cds.cern.ch/record/2857858
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author Prinzie, Jeffrey
Biereigel, Stefan
Kulis, Szymon
Leitao, Pedro
Moreira, Paulo
author_facet Prinzie, Jeffrey
Biereigel, Stefan
Kulis, Szymon
Leitao, Pedro
Moreira, Paulo
author_sort Prinzie, Jeffrey
collection CERN
description This article presents a radiation tolerant charge-pump phase-locked loop (PLL) with low static phase error variability suitable for high-performance clock systems in high-dose radiation environments. We investigate the use of source switching charge-pump architectures to minimize any voltage- or dose-dependent charge injection and address the limitations of enclosed layout transistors (ELTs) in the conventional drain switched charge-pump. The circuit has been processed in a 65-nm complementary metal–oxide–semiconductor (CMOS) technology and has been experimentally verified with X-rays up to a total ionizing dose of 180 Mrad.
id cern-2857858
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2023
record_format invenio
spelling cern-28578582023-05-05T18:57:08Zdoi:10.1109/TNS.2022.3223969http://cds.cern.ch/record/2857858engPrinzie, JeffreyBiereigel, StefanKulis, SzymonLeitao, PedroMoreira, PauloSource Switched Charge-Pump PLLs for High-Dose Radiation EnvironmentsDetectors and Experimental TechniquesThis article presents a radiation tolerant charge-pump phase-locked loop (PLL) with low static phase error variability suitable for high-performance clock systems in high-dose radiation environments. We investigate the use of source switching charge-pump architectures to minimize any voltage- or dose-dependent charge injection and address the limitations of enclosed layout transistors (ELTs) in the conventional drain switched charge-pump. The circuit has been processed in a 65-nm complementary metal–oxide–semiconductor (CMOS) technology and has been experimentally verified with X-rays up to a total ionizing dose of 180 Mrad.oai:cds.cern.ch:28578582023
spellingShingle Detectors and Experimental Techniques
Prinzie, Jeffrey
Biereigel, Stefan
Kulis, Szymon
Leitao, Pedro
Moreira, Paulo
Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
title Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
title_full Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
title_fullStr Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
title_full_unstemmed Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
title_short Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
title_sort source switched charge-pump plls for high-dose radiation environments
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1109/TNS.2022.3223969
http://cds.cern.ch/record/2857858
work_keys_str_mv AT prinziejeffrey sourceswitchedchargepumppllsforhighdoseradiationenvironments
AT biereigelstefan sourceswitchedchargepumppllsforhighdoseradiationenvironments
AT kulisszymon sourceswitchedchargepumppllsforhighdoseradiationenvironments
AT leitaopedro sourceswitchedchargepumppllsforhighdoseradiationenvironments
AT moreirapaulo sourceswitchedchargepumppllsforhighdoseradiationenvironments

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