Buried Layer Low Gain Avalanche Diodes

We report on the design, simulation and test of Low Gain Avalanche Diodes (LGADs) which utilize a buried gain layer. The buried layer is formed by patterned implantation of a 50-micron thick float zone substrate wafer-bonded to a low resistivity carrier. This is then followed by epitaxial deposition...

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Detalles Bibliográficos
Autores principales: Apresyan, Artur, Giacomini, G, Heller, Ryan Edward, Mannelli, Marcello, Islam, Rashidul, Lipton, Ronald J, Tricoli, Alessandro, Chen, W
Lenguaje:eng
Publicado: 2021
Materias:
Other
Acceso en línea:https://dx.doi.org/10.1088/1742-6596/2374/1/012166
http://cds.cern.ch/record/2861346

Internet

https://dx.doi.org/10.1088/1742-6596/2374/1/012166
http://cds.cern.ch/record/2861346

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