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Buried Layer Low Gain Avalanche Diodes
We report on the design, simulation and test of Low Gain Avalanche Diodes (LGADs) which utilize a buried gain layer. The buried layer is formed by patterned implantation of a 50-micron thick float zone substrate wafer-bonded to a low resistivity carrier. This is then followed by epitaxial deposition...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2021
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/1742-6596/2374/1/012166 http://cds.cern.ch/record/2861346 |