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Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

This study focuses on the properties of the B<math altimg="si213.svg" display="inline" id="d1e2401"><msub><mrow/><mrow><mtext>i</mtext></mrow></msub></math>O<math altimg="si213.svg" display="inline&...

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Detalles Bibliográficos
Autores principales:	Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Makarenko, L., Pintilie, I., Filip, Lucian D., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
Lenguaje:	eng
Publicado:	2023
Materias:	physics.app-ph
Acceso en línea:	https://dx.doi.org/10.1016/j.nima.2023.168559 http://cds.cern.ch/record/2866067

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