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The electronic structure of amphoteric Sn dopants in III-V compound semiconductors

Detalles Bibliográficos
Autores principales: Weyer, G, Petersen, J W, Damgaard, S
Lenguaje:eng
Publicado: 1983
Materias:
Acceso en línea:http://cds.cern.ch/record/286655
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author Weyer, G
Petersen, J W
Damgaard, S
author_facet Weyer, G
Petersen, J W
Damgaard, S
author_sort Weyer, G
collection CERN
id cern-286655
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1983
record_format invenio
spelling cern-2866552019-09-30T06:29:59Zhttp://cds.cern.ch/record/286655engWeyer, GPetersen, J WDamgaard, SThe electronic structure of amphoteric Sn dopants in III-V compound semiconductorsDetectors and Experimental Techniquesoai:cds.cern.ch:2866551983
spellingShingle Detectors and Experimental Techniques
Weyer, G
Petersen, J W
Damgaard, S
The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
title The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
title_full The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
title_fullStr The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
title_full_unstemmed The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
title_short The electronic structure of amphoteric Sn dopants in III-V compound semiconductors
title_sort electronic structure of amphoteric sn dopants in iii-v compound semiconductors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/286655
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