Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

In this work, the effects of $^\text{60}$Co $\gamma$-ray irradiation on high resistivity $p$-type diodes have been investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and \SI2{\mega Gy}. Both macroscopic ($I$--$V$, $C$--$V$) and microscopic (Thermally Stimulated Current~(TSC)) measu...

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Detalles Bibliográficos
Autores principales: Liao, C., Fretwurst, E., Garutti, E., Schwandt, J., Pintilie, I., Himmerlich, A., Moll, M., Gurimskaya, Y., Li, Z.
Lenguaje:eng
Publicado: 2023
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2866750

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