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A new Low Gain Avalanche Diode concept: the double-LGAD
This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end...
Autores principales: | , , , , , , , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2023
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/2866766 |
Sumario: | This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm. |
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