A new Low Gain Avalanche Diode concept: the double-LGAD

This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end...

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Detalles Bibliográficos
Autores principales: Carnesecchi, F., Strazzi, S., Alici, A., Arcidiacono, R., Cartiglia, N., Cavazza, D., Durando, S., Ferrero, M., Margotti, A., Menzio, L., Nania, R., Sabiu, B., Scioli, G., Siviero, F., Sola, V., Vignola, G.
Lenguaje:eng
Publicado: 2023
Materias:
physics.ins-det
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/2866766
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author Carnesecchi, F.
Strazzi, S.
Alici, A.
Arcidiacono, R.
Cartiglia, N.
Cavazza, D.
Durando, S.
Ferrero, M.
Margotti, A.
Menzio, L.
Nania, R.
Sabiu, B.
Scioli, G.
Siviero, F.
Sola, V.
Vignola, G.
author_facet Carnesecchi, F.
Strazzi, S.
Alici, A.
Arcidiacono, R.
Cartiglia, N.
Cavazza, D.
Durando, S.
Ferrero, M.
Margotti, A.
Menzio, L.
Nania, R.
Sabiu, B.
Scioli, G.
Siviero, F.
Sola, V.
Vignola, G.
author_sort Carnesecchi, F.
collection CERN
description This paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.
id cern-2866766
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2023
record_format invenio
spelling cern-28667662023-10-03T15:51:59Zhttp://cds.cern.ch/record/2866766engCarnesecchi, F.Strazzi, S.Alici, A.Arcidiacono, R.Cartiglia, N.Cavazza, D.Durando, S.Ferrero, M.Margotti, A.Menzio, L.Nania, R.Sabiu, B.Scioli, G.Siviero, F.Sola, V.Vignola, G.A new Low Gain Avalanche Diode concept: the double-LGADphysics.ins-detDetectors and Experimental TechniquesThis paper describes the new concept of the double-LGAD. The goal is to increase the charge at the input of the electronics, keeping a time resolution equal or better than a standard (single) LGAD; this has been realized by adding the charges of two coupled LGADs while still using a single front-end electronics. The study here reported has been done starting from single LGAD with a thickness of 25 µm, 35 µm and 50 µm.arXiv:2307.14320oai:cds.cern.ch:28667662023-07-26
spellingShingle physics.ins-det
Detectors and Experimental Techniques
Carnesecchi, F.
Strazzi, S.
Alici, A.
Arcidiacono, R.
Cartiglia, N.
Cavazza, D.
Durando, S.
Ferrero, M.
Margotti, A.
Menzio, L.
Nania, R.
Sabiu, B.
Scioli, G.
Siviero, F.
Sola, V.
Vignola, G.
A new Low Gain Avalanche Diode concept: the double-LGAD
title A new Low Gain Avalanche Diode concept: the double-LGAD
title_full A new Low Gain Avalanche Diode concept: the double-LGAD
title_fullStr A new Low Gain Avalanche Diode concept: the double-LGAD
title_full_unstemmed A new Low Gain Avalanche Diode concept: the double-LGAD
title_short A new Low Gain Avalanche Diode concept: the double-LGAD
title_sort new low gain avalanche diode concept: the double-lgad
topic physics.ins-det
Detectors and Experimental Techniques
url http://cds.cern.ch/record/2866766
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