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Mössbauer studies of defects in ion implanted metals and semiconductors

Detalles Bibliográficos
Autor principal: Weyer, G
Lenguaje:eng
Publicado: 1988
Materias:
Acceso en línea:http://cds.cern.ch/record/286694
_version_ 1780888344536809472
author Weyer, G
author_facet Weyer, G
author_sort Weyer, G
collection CERN
id cern-286694
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1988
record_format invenio
spelling cern-2866942019-09-30T06:29:59Zhttp://cds.cern.ch/record/286694engWeyer, GMössbauer studies of defects in ion implanted metals and semiconductorsOther Fields of Physicsoai:cds.cern.ch:2866941988
spellingShingle Other Fields of Physics
Weyer, G
Mössbauer studies of defects in ion implanted metals and semiconductors
title Mössbauer studies of defects in ion implanted metals and semiconductors
title_full Mössbauer studies of defects in ion implanted metals and semiconductors
title_fullStr Mössbauer studies of defects in ion implanted metals and semiconductors
title_full_unstemmed Mössbauer studies of defects in ion implanted metals and semiconductors
title_short Mössbauer studies of defects in ion implanted metals and semiconductors
title_sort mössbauer studies of defects in ion implanted metals and semiconductors
topic Other Fields of Physics
url http://cds.cern.ch/record/286694
work_keys_str_mv AT weyerg mossbauerstudiesofdefectsinionimplantedmetalsandsemiconductors