Cargando…
Diffusion of groups IV and V impurities in silicon at high donor concentrations: a comparison between experimental and theoretical results
Autores principales: | Kyllesbech-Larsen, K, Nylandsted-Larsen, A |
---|---|
Lenguaje: | eng |
Publicado: |
1990
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/286695 |
Ejemplares similares
-
Defect-impurity formation at high donor concentrations in silicon
por: Nylandsted-Larsen, A, et al.
Publicado: (1992) -
Diffusion of ion implanted Sn and Sb in heavily doped silicon
por: Andersen, P E, et al.
Publicado: (1988) -
Annealing behaviour of high concentration of implanted Sb and Sn in silicon
por: Weyer, G, et al.
Publicado: (1986) -
Systematic experimental and theoretical studies of the lattice vibrations of host atoms and substitutional Sn impurities in III-V semiconductors
por: Nielsen, O H, et al.
Publicado: (1982) -
The nature of electrically inactive antimony in silicon
por: Nylandsted-Larsen, A, et al.
Publicado: (1986)