Cargando…

Defect-impurity formation at high donor concentrations in silicon

Detalles Bibliográficos
Autores principales: Nylandsted-Larsen, A, Weyer, G
Lenguaje:eng
Publicado: 1992
Materias:
Acceso en línea:http://cds.cern.ch/record/286798
_version_ 1780888366889304064
author Nylandsted-Larsen, A
Weyer, G
author_facet Nylandsted-Larsen, A
Weyer, G
author_sort Nylandsted-Larsen, A
collection CERN
id cern-286798
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1992
record_format invenio
spelling cern-2867982019-09-30T06:29:59Zhttp://cds.cern.ch/record/286798engNylandsted-Larsen, AWeyer, GDefect-impurity formation at high donor concentrations in siliconOther Fields of Physicsoai:cds.cern.ch:2867981992
spellingShingle Other Fields of Physics
Nylandsted-Larsen, A
Weyer, G
Defect-impurity formation at high donor concentrations in silicon
title Defect-impurity formation at high donor concentrations in silicon
title_full Defect-impurity formation at high donor concentrations in silicon
title_fullStr Defect-impurity formation at high donor concentrations in silicon
title_full_unstemmed Defect-impurity formation at high donor concentrations in silicon
title_short Defect-impurity formation at high donor concentrations in silicon
title_sort defect-impurity formation at high donor concentrations in silicon
topic Other Fields of Physics
url http://cds.cern.ch/record/286798
work_keys_str_mv AT nylandstedlarsena defectimpurityformationathighdonorconcentrationsinsilicon
AT weyerg defectimpurityformationathighdonorconcentrationsinsilicon