Cargando…

Characteristics of GaAs complementary heterojunction FETs (C-HFETs) and C-HFET based amplifiers exposed to high neutron fluences

Detalles Bibliográficos
Autores principales:	Karpinski, W, Lübelsmeyer, K, Pandoulas, D, Pierschel, G, Rente, C, Tenbusch, F
Lenguaje:	eng
Publicado:	1995
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/286896

Ejemplares similares

DC and noise performance of C-HFET transistors at low drain current densities
por: Karpinski, W, et al.
Publicado: (1995)

Noise and DC characteristics of GaAs FETs for their use in front-end electronics at future colliders
por: Karpinski, W, et al.
Publicado: (1994)

Effects of irradiation on the noise and DC performance of transistors and preamplifiers based on GaAs technology
por: Karpinski, W, et al.
Publicado: (1995)

Noise characteristics of radiation-hard FETs for front-end electronics
por: Karpinski, W, et al.
Publicado: (1994)

Measurement on a GaAs microstrip detector with 50 GeV/c electrons
por: Braunschweig, W, et al.
Publicado: (1995)

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
por: Liao, Wen-Chia, et al.
Publicado: (2014)

Test results of GaAs strip detectors in high energy particle beams
por: Braunschweig, W, et al.
Publicado: (1995)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

Investigation of the radiation damage of GaAs detectors by neutrons and photons
por: Braunschweig, W, et al.
Publicado: (1995)

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication
por: Kim, Tae Kyoung, et al.
Publicado: (2021)

Response of RadFET Dosimeters to High Fluences of Fast Neutrons
por: Ravotti, F, et al.
Publicado: (2004)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

Calculation of the electric field in GaAs particle detectors
por: Kubicki, T, et al.
Publicado: (1994)

A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT
por: Li, Jiaxuan, et al.
Publicado: (2023)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
por: Wu, Yao, et al.
Publicado: (2018)

Neutron fluence, neutron spectra and kerma
por: International Commission on Radiation Units and Measurements. Bethesda
Publicado: (1969)

SiGe, GaAs, and InP heterojunction bipolar transistors
por: Yuan, J S
Publicado: (1999)

Large Lateral Photovoltaic Effect in MoS(2)/GaAs Heterojunction
por: Hao, Lanzhong, et al.
Publicado: (2017)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping defect cascades
por: Andreasen, H, et al.
Publicado: (1992)

Low fluence implantations in GaAs: a Mössbauer spectroscopy investigation of individual and overlapping damage cascade
por: Andreasen, H, et al.
Publicado: (1990)

Ge/GaAs Based Negative Capacitance Tunnel FET Biosensor: Proposal and Sensitivity Analysis
por: Paul, Omdarshan, et al.
Publicado: (2022)

Charge collection efficiencies and reverse current densities of GaAs detectors
por: Braunschweig, W, et al.
Publicado: (1995)

Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field
por: Wu, Qing, et al.
Publicado: (2017)

Investigations on damage of GaAs detectors caused by neutrons (peak energy 1 MeV) and $^{60}$Co photons
por: Kubicki, T, et al.
Publicado: (1995)

The Sensitivity of GaAs and Silicon Particle Detectors to Fast Neutrons
por: Chilingarov, A G, et al.
Publicado: (1995)

Radiation hardness tests of GaAs amplifiers for liquid argon calorimetry
por: Bán, J, et al.
Publicado: (1995)

Development of GaAs detectors at the RWTH Aachen
por: Kubicki, T, et al.
Publicado: (1993)

Neutron fluences in iron or lead calorimeters at the SSC
por: Russ, J S, et al.
Publicado: (1991)

Operation Mechanism of a MoS(2)/BP Heterojunction FET
por: Lim, Sung Kwan, et al.
Publicado: (2018)

Radiation damage to neutron and proton irradiated GaAs particle detectors
por: Rogalla, M., et al.
Publicado: (1997)

Neutrons and Photons Fluences in the DTL Section of the ESS Linac
por: Lari, Luisella, et al.
Publicado: (2017)

Fluence measurement at the neutron time of flight experiment at CERN
por: Weiss, Christina
Publicado: (2014)

Low-energy neutron fluences in idealized collider geometries
por: Stevenson, G R, et al.
Publicado: (1991)

Radiation Hardness of GaAs p-i-n Diodes to Neutron Irradiation
por: Buttar, C M, et al.
Publicado: (1996)

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
por: Kim, Tae-Hyeon, et al.
Publicado: (2021)

S-band hybrid amplifiers based on hydrogenated diamond FETs
por: Ciccognani, Walter, et al.
Publicado: (2020)

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
por: Xie, Haiwu, et al.
Publicado: (2021)

An update calculation of neutron fluence in the CNGS first muon pit
por: Ferrari, A, et al.
Publicado: (2006)

Neutron fluence calculations for the SDC detector and the results of codes comparison
por: Job, P K, et al.
Publicado: (1994)

Behaviour of PWO scintillators after high fluence neutron irradiation
por: Chipaux, Rémi, et al.
Publicado: (2006)

Cannot write session to /tmp/vufind_sessions/sess_i7ubru9e9v7etnsm6qv7penqn2