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First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process

The Inner Tracking System (ITS) of the ALICE experiment at CERN will undergo an upgrade during the LHC long shutdown 3, in which the three innermost tracking layers will be replaced. This upgrade, named the Inner Tracking System 3 (ITS3), employs stitched wafer-scale Monolithic Active Pixel Sensors...

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Autor principal: Buckland, M.
Lenguaje:eng
Publicado: 2023
Materias:
Acceso en línea:http://cds.cern.ch/record/2872501
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author Buckland, M.
author_facet Buckland, M.
author_sort Buckland, M.
collection CERN
description The Inner Tracking System (ITS) of the ALICE experiment at CERN will undergo an upgrade during the LHC long shutdown 3, in which the three innermost tracking layers will be replaced. This upgrade, named the Inner Tracking System 3 (ITS3), employs stitched wafer-scale Monolithic Active Pixel Sensors fabricated in a 65 nm CMOS process. The sensors are 260 mm in length and thinned to less than 50 um then bent to form truly half-cylindrical half-barrels. The feasibility of this process for the ITS3 was explored with the first test production run (MLR1) in 2021, whose goal was to evaluate the charged particle detection efficiency and the sensor performance under non-ionising and ionising radiation up to the expected levels for ALICE ITS3 of $10^{13}$$1$ MeV n$_{\mathrm{eq}}$ cm$^{-2}$ (NIEL) and 10 kGy (TID). Three sensor flavours were produced to investigate this process: Analog Pixel Test Structure (APTS), Circuit Exploratoire 65 (CE65) and Digital Pixel Test Structure (DPTS). This contribution gives an overview of the MLR1 submission and test results, describing the different sensor flavours and presenting the results of the performance measurements done with particle beams for various chip variants and irradiation levels.
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institution Organización Europea para la Investigación Nuclear
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publishDate 2023
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spelling cern-28725012023-10-19T02:16:33Zhttp://cds.cern.ch/record/2872501engBuckland, M.First measurements with monolithic active pixel test structures produced in a 65 nm CMOS processphysics.ins-detDetectors and Experimental TechniquesThe Inner Tracking System (ITS) of the ALICE experiment at CERN will undergo an upgrade during the LHC long shutdown 3, in which the three innermost tracking layers will be replaced. This upgrade, named the Inner Tracking System 3 (ITS3), employs stitched wafer-scale Monolithic Active Pixel Sensors fabricated in a 65 nm CMOS process. The sensors are 260 mm in length and thinned to less than 50 um then bent to form truly half-cylindrical half-barrels. The feasibility of this process for the ITS3 was explored with the first test production run (MLR1) in 2021, whose goal was to evaluate the charged particle detection efficiency and the sensor performance under non-ionising and ionising radiation up to the expected levels for ALICE ITS3 of $10^{13}$$1$ MeV n$_{\mathrm{eq}}$ cm$^{-2}$ (NIEL) and 10 kGy (TID). Three sensor flavours were produced to investigate this process: Analog Pixel Test Structure (APTS), Circuit Exploratoire 65 (CE65) and Digital Pixel Test Structure (DPTS). This contribution gives an overview of the MLR1 submission and test results, describing the different sensor flavours and presenting the results of the performance measurements done with particle beams for various chip variants and irradiation levels.arXiv:2309.14814oai:cds.cern.ch:28725012023-09-26
spellingShingle physics.ins-det
Detectors and Experimental Techniques
Buckland, M.
First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
title First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
title_full First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
title_fullStr First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
title_full_unstemmed First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
title_short First measurements with monolithic active pixel test structures produced in a 65 nm CMOS process
title_sort first measurements with monolithic active pixel test structures produced in a 65 nm cmos process
topic physics.ins-det
Detectors and Experimental Techniques
url http://cds.cern.ch/record/2872501
work_keys_str_mv AT bucklandm firstmeasurementswithmonolithicactivepixelteststructuresproducedina65nmcmosprocess