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An Analysis of the Significance of the 14N(n, p) 14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs
The thermal neutron threat to the reliability of electronic devices caused by $^{10}\text{B}$ capture is a recognized issue that prompted changes in the manufacturing process of electronic devices with the aim of limiting as much as possible the presence of this isotope nearby device sensitive volu...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2023
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/TNS.2023.3239407 http://cds.cern.ch/record/2875173 |