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An Analysis of the Significance of the 14N(n, p) 14C Reaction for Single-Event Upsets Induced by Thermal Neutrons in SRAMs

The thermal neutron threat to the reliability of electronic devices caused by $^{10}\text{B}$ capture is a recognized issue that prompted changes in the manufacturing process of electronic devices with the aim of limiting as much as possible the presence of this isotope nearby device sensitive volu...

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Detalles Bibliográficos
Autores principales:	Coronetti, Andrea, García Alía, Rubén, Lucsanyi, David, Letiche, Manon, Kastriotou, Maria, Cazzaniga, Carlo, Frost, Christopher D, Saigné, Frédéric
Lenguaje:	eng
Publicado:	2023
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1109/TNS.2023.3239407 http://cds.cern.ch/record/2875173

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