Monolithic CMOS Sensors for high energy physics — Challenges and perspectives

CMOS cameras revolutionized the visible imaging world, and now also move into other fields. After years of intensive research with significant progress and introduction in a few experiments, monolithic active pixel sensors integrating sensor matrix and readout in one piece of silicon are considered for wider application in high energy physics. Detailed requirements and implementation of CMOS sensors in high energy physics differ from those for visible light. This paper tries to give an overview. •Monolithic Active Pixel Sensors (MAPS) will be used widely in High Energy Physics (HEP).•CMOS MAPS for HEP greatly profit from the progress of CMOS imagers for visible light.•Tolerance up to several 1016 1 MeV neq/cm2 and several MGy is within reach.•Design for yield and lower power densities will enable stitching and wafer stacking.•Efficient volume test, assembly, and mounting will enable large area detectors.•Experts in digital-on-top design, verification and TCAD are essential for MAPS in HEP.•Large area pixel sensors are enabling devices for many cutting edge research fields.•MAPS production volume for HEP should allow access to the most advanced technologies.•Our HEP community can have an impact on society through its MAPS development.