Cargando…
Anisotropies in strain and quantum efficiency of strained GaAs grown on GaAsP
Autores principales: | Mair, R W, Prepost, R, Tang, H, Garwin, E L, Maruyama, T, Mulhollan, G A |
---|---|
Lenguaje: | eng |
Publicado: |
1995
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/289549 |
Ejemplares similares
-
The polarization study of strained GaAs photocathode structures
por: Mulhollan, G A, et al.
Publicado: (1996) -
Lattice Strain Relaxation and Compositional Control in As-Rich GaAsP/(100)GaAs Heterostructures Grown by MOVPE
por: Prete, Paola, et al.
Publicado: (2023) -
Polarization studies of strained GaAs photocathodes at the SLAC Gun Test Laboratory
por: Sáez, P J, et al.
Publicado: (1996) -
Self-Formed Quantum Wires and Dots in GaAsP–GaAsP
Core–Shell Nanowires
por: Fonseka, H. Aruni, et al.
Publicado: (2019) -
Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum
Dots with Strong Carrier Confinement
por: Zhang, Yunyan, et al.
Publicado: (2021)