A mixed analog-digital radiation hard technology for high energy physics electronics: DMILL (Durci Mixte sur Isolant Logico-Linéaire)

The high radiation level expected in the inner regions of the high luminosity LHC detectors (gamma and neutron) will require radiation hardened electronics. A consortium between the CEA (Commissariat a l'Energie Atomique) and Thomson TMS (Thomson Composants Militaires et Spatiaux) has been created to push for the development and the industrialization of a nascent technology which looks particularly adapted to the needs of HEP electronics. This technology, currently under development at the LETI(CEA), uses a SIMOX substrate with an epitaxial silicon film. It includes CMOS, JFETs and vertical bipolar transistors with a potential multi-megarad hardness. The CMOS and bipolar transistors constitute a rad-hard BiCMOS which will be useful to design analog and digital high-speed architectures. JFETs, which have intrinsically high hardness behaviour and low noise performances even at low temperature will enable very rad-hard, low noise front end electronics to be designed. Present results, together with the improvements under way, will lead to a mixed analog/digital technology with a high level of radiation hardness (neutron fluence, cumulated gamma dose, immunity to upset). The aim of this proposal is to describe this technology, and to ask the DRDC to be the interface between the high energy physics community and our Consortium in order to allow us to orientate the technology in the best suitable way for LHC rad-hard electronics.