Cargando…
Emission channeling investigation of implantation defects and impurities in II-VI-semiconductors
Autores principales: | Bollmann, J, Czermak, A, Jahn, S G |
---|---|
Lenguaje: | eng |
Publicado: |
1993
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/294751 |
Ejemplares similares
-
Emission Channeling Investigation of Implantation Defects and Impurities in II-VI-Semiconductors
por: Reinhold, B, et al.
Publicado: (2002) -
Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
por: Achtziger, N, et al.
Publicado: (1992) -
Combined electrical, optical, and structural investigations of impurities and defects in wide-gap II-VI semiconductors
por: Achtziger, N, et al.
Publicado: (1996) -
Emission channeling with short-lived isotopes: lattice location of impurities in semiconductors and oxides
por: Pereira, L M C, et al.
Publicado: (2013) -
Combined electrical, optical and structural investigations of impurities and defects in wide-gap II-VI compounds: addendum to the proposal P35
por: Boyn, R, et al.
Publicado: (1998)