Pion-induced damage in silicon detectors

The damage induced by pions in silicon detectors is studied for positive and negative pions for fluence up to 10(14)cm-2 and 10(13) cm-2 respectively. Results on the energy dependence of the damage in the region of 65-330 MeV near to the  resonance are presented. The change in detector characterist...

Descripción completa

Detalles Bibliográficos
Autores principales: Bates, S, Furetta, C, Glaser, M, Lemeilleur, F, León-Florián, E, Gössling, C, Kaiser, B, Rolf, A, Wunstorf, R, Feick, H, Fretwurst, E, Lindström, G, Moll, Michael, Taylor, G, Chilingarov, A G
Lenguaje:eng
Publicado: 1995
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/0168-9002(96)00538-4
http://cds.cern.ch/record/295021
Descripción
Sumario:The damage induced by pions in silicon detectors is studied for positive and negative pions for fluence up to 10(14)cm-2 and 10(13) cm-2 respectively. Results on the energy dependence of the damage in the region of 65-330 MeV near to the  resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron and proton-induced damage are presented and discussed.

Ejemplares similares