Cargando…

Mössbauer and DLTS investigations of impurity-vacancy complexes in semiconductors

Detalles Bibliográficos
Autores principales:	Bonde-Nielsen, K, Nylandsted-Larsen, A, Petersen, J W
Lenguaje:	eng
Publicado:	1992
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/295359

Ejemplares similares

The electronic structure of impurities in semiconductors
por: Bonde-Nielsen, K, et al.
Publicado: (1991)

Mössbauer study of the formation of impurity-vacancy complexes in copper
por: Andreasen, H, et al.
Publicado: (1983)

Applications of Mössbauer spectroscopy to investigations of defects in semiconductors
por: Nylandsted-Larsen, A, et al.
Publicado: (1988)

A Mössbauer study of impurity-vacancy defects in copper
por: Andreasen, H, et al.
Publicado: (1982)

Mössbauer studies of dilute magnetic semiconductors
por: Fanciulli, M, et al.
Publicado: (2006)

DLTS measurement of energetic levels, generated in silicon detectors
por: Bosetti, M, et al.
Publicado: (1995)

Status report and proposal for a continuation of experiment IS20: Mossbauer studies of implanted impurities in solids
por: Weyer, G, et al.
Publicado: (1988)

Production of rare earth isotope beams for radiotracer- DLTS on SiC
por: Pasold, G, et al.
Publicado: (2003)

Mossbauer studies of semiconductors with radioactive $^{57}$Mn probe atoms
por: Langouche, G, et al.
Publicado: (1992)

Post acceleration of rare earth isotope beams for radiotracer - DLTS on SiC
por: Reislöhner, U, et al.
Publicado: (2002)

Status report and proposal for a continuation of the ISOLDE project: Mössbauer studies of implanted impurities in solids
por: CERN. Geneva. Proton Synchrotron and Synchrocyclotron Committee
Publicado: (1982)

Status report and proposal for a continuation of experiment IS30: Mössbauer studies of implanted impurities in solids
por: CERN. Geneva. Proton Synchrotron and Synchrocyclotron Committee
Publicado: (1983)

Status report and proposal for a continuation of experiment IS20: Mössbauer studies of implanted impurities in solids
por: CERN. Geneva. Proton Synchrotron and Synchrocyclotron Committee
Publicado: (1983)

Emission channeling investigation of implantation defects and impurities in II-VI-semiconductors
por: Bollmann, J, et al.
Publicado: (1993)

Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
por: Achtziger, N, et al.
Publicado: (1992)

Combined Mössbauer and PAC investigation of impurity-defect complexes in ion-implanted GaP and GaAs
por: Nielsen, K B
Publicado: (1985)

Combined electrical, optical, and structural investigations of impurities and defects in wide-gap II-VI semiconductors
por: Achtziger, N, et al.
Publicado: (1996)

Electron paramagnetic resonance investigations of isolated impurities and impurity pairs in silicon
por: Burchard, A, et al.
Publicado: (1996)

Gold and platinum in silicon-isolated impurities and impurity complexes
por: Burchard, A, et al.
Publicado: (1996)

Gold and platinum in silicon isolated impurities and impurity complexes
por: Burchard, A, et al.
Publicado: (1996)

Investigations of deep-level Fe-centres in silicon by Mössbauer spectroscopy
por: Weyer, G
Publicado: (2000)

Investigation of deep-level Fe-centres in silicon by Mössbauer spectroscopy
por: Weyer, G
Publicado: (1999)

22nd International Conference on Defects in Semiconductors
por: Bonde Nielsen, K., et al.
Publicado: (2004)

Mössbauer Study of a Complex $^{119}Sn$ Impurity Defect in GaP
por: Weyer, G, et al.
Publicado: (1980)

Emission channeling with short-lived isotopes: lattice location of impurities in semiconductors and oxides
por: Pereira, L M C, et al.
Publicado: (2013)

Defects studies in high-energy ion implanted semiconductors
por: Weyer, G, et al.
Publicado: (1994)

Internal oxidation of sp-impurities in silver studied by $^{119}$Sn Mössbauer spectroscopy
por: Andreasen, H, et al.
Publicado: (1983)

Mossbauer study of a complex /sup 119/Sn impurity-defect in gallium phosphide
por: Weyer, G, et al.
Publicado: (1980)

Investigations of deep-level Fe-centres in Si by Mössbauer spectroscopy: Proposal to the ISC
por: Burchard, A, et al.
Publicado: (1996)

Emission Mössbauer Spectroscopy of high energy transition isotopes
por: Gunnlaugsson, HP, et al.
Publicado: (2015)

Emission Mössbauer Spectroscopy of high energy transition isotopes
por: Molholt, T E, et al.
Publicado: (2015)

Nuclear-chemical synthesis of iron compounds and their Mössbauer identification
por: Gunnlaugsson, HP, et al.
Publicado: (2017)

Impurity channels of the long-lived Mossbauer effect
por: Liu, Yao-Yuan, et al.
Publicado: (2015)

Mössbauer study of a complex Sn-impurity defect in GaAs from implantations of radioactive $^{119}$In ions
por: Weyer, G, et al.
Publicado: (1980)

Emission Mössbauer spectroscopy of advanced materials for opto- and nano- electronics
por: Gunnlaugsson, H P, et al.
Publicado: (2010)

Emission Mössbauer spectroscopy of advanced materials for opto- and nano- electronics
por: Gunnlaugsson, HP, et al.
Publicado: (2012)

Electron-positron-channelling and Mössbauer-effect studies of indium-vacancy complexes in ion-implanted nickel
por: Besold, B, et al.
Publicado: (1986)

An experimental chamber for Mössbauer experiments at near liquid-nitrogen temperature
por: Fumero, E, et al.
Publicado: (2001)

DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon
por: Makarenko, L F, et al.
Publicado: (2009)

Study of molybdenum oxide by means of perturbed angular correlations and Mössbauer spectroscopy
por: Schell, Juliana, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_qoourphddln23ovksc5pe0bb96