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Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors

Detalles Bibliográficos
Autores principales: Achtziger, N, Baurichter, A, Bollmann, J
Lenguaje:eng
Publicado: 1992
Materias:
Acceso en línea:http://cds.cern.ch/record/295364
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author Achtziger, N
Baurichter, A
Bollmann, J
author_facet Achtziger, N
Baurichter, A
Bollmann, J
author_sort Achtziger, N
collection CERN
id cern-295364
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1992
record_format invenio
spelling cern-2953642019-09-30T06:29:59Zhttp://cds.cern.ch/record/295364engAchtziger, NBaurichter, ABollmann, JCombined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductorsDetectors and Experimental TechniquesCERN-ISC-92-35ISC-P-35oai:cds.cern.ch:2953641992
spellingShingle Detectors and Experimental Techniques
Achtziger, N
Baurichter, A
Bollmann, J
Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
title Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
title_full Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
title_fullStr Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
title_full_unstemmed Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
title_short Combined electrical, optical and nuclear investigations of impurities and defects in II-VI semiconductors
title_sort combined electrical, optical and nuclear investigations of impurities and defects in ii-vi semiconductors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/295364
work_keys_str_mv AT achtzigern combinedelectricalopticalandnuclearinvestigationsofimpuritiesanddefectsiniivisemiconductors
AT baurichtera combinedelectricalopticalandnuclearinvestigationsofimpuritiesanddefectsiniivisemiconductors
AT bollmannj combinedelectricalopticalandnuclearinvestigationsofimpuritiesanddefectsiniivisemiconductors